重要性是模型對已發布報導給出的 1–5 分，不是對市場的預測。
已排定事件列上的影響是公司顯著度層級（高/中由圖譜中心度與規模判定；低僅用於人工整理的次要事件），不是對波動幅度的預測。
標記為已確認的財報日期，是 Yahoo Finance 認定由公司確認的；預估表示尚未公布。未加標記的列沒有可查的出處記錄。
經濟數據發布屬於總體經濟、不歸屬任何產業，因此在任何檢視下都會保留。沒有數值的發布表示尚未公布，頁面會直說，而不是顯示為零。
涵蓋被追蹤公司的即將到來的事件；已過去的事件會歸檔，並在可得時補上結果——這些結果都經人工整理並附引用，絕不杜撰。沒有結果的歷史列會顯示「結果待定」。
閉鎖期屆滿或指數調整的列會多出一行算術——將變得可賣出的股數，或指數基金必須買進的股數，以佔流通股的比例表示——依招股說明書或指數編製方法讀出，兩個數字都在該列註明出處。它陳述的是機制，不是價格走勢。由 IPO + 180 天推算出的閉鎖期日期會一直標為預估，直到公司自己說明為止。
10月13日週二 · 今天
10月14日週三
9月8日週二
產品
Intel said it has processed more than one million wafers on High-NA EUV tooling, more than the rest of the industry combined, and is pioneering 6x12 photomasks to speed production and cut cost. It is a concrete marker of its advanced-node manufacturing ramp.
合作
ASML and TSMC announced a joint initiative to move the industry to large-format photomasks for High NA EUV lithography. The two companies will coordinate the mask-infrastructure transition that High NA adoption at leading-edge nodes depends on.
Accessibility: Skip TopNav ASML and TSMC Announce Initiative to Pioneer Industry Transition to Large-Format Photomasks for High NA EUV September 08, 2026 02:04 ET | Source: ASML Netherlands BV ASML Netherlands BV ASML and TSMC Announce Initiative to Pioneer Industry Transition to Large-Format Photomasks for High NA EUV On September 7, in advance of the SPIE Bacus Conference, ASML and TSMC formed a collaborative industry initiative to drive the transition to 12-inch photomasks, maximizing the value of High NA EUV lithography. The initiative targets establishing a 12-inch mask pilot line by 2031…
合作
Samsung and ASML expanded their collaboration to develop 12-inch large-format photomasks and to bring High-NA EUV into Samsung's memory production, targeting a DRAM rollout around 2028. It commits Samsung's memory roadmap to ASML's most advanced lithography platform.
融資
合作
